Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror
نویسندگان
چکیده
We report long-cavity (60.5 λ) GaN-based vertical-cavity surface-emitting lasers with a topside monolithic GaN concave mirror, buried tunnel junction current aperture, and bottomside nanoporous distributed Bragg reflector. Under pulsed operation, VCSEL 9 µm aperture had threshold density of 6.6 kA/cm2, differential efficiency 0.7%, maximum output power 290 µW for lasing mode at 411 nm divergence angle 8.4°. CW the increased to 7.3 decreased 0.4%, peak 130 was reached 23 kA/cm2.
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ژورنال
عنوان ژورنال: Photonics
سال: 2023
ISSN: ['2304-6732']
DOI: https://doi.org/10.3390/photonics10060646